Fachbereich Informatik und Mikrosystemtechnik
Hochschule Kaiserslautern
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Allweyer, Thomas
BPMN 2.0 - Business Process Model and Notation : Einführung in den Standard für die Geschäftsprozessmodellierung3. Aufl. Norderstedt: Books on Demand 2015
Allweyer, Thomas
BPMN-Prozessmodellierungstools. Eine Studie zu 13 ModellierungswerkzeugenERP Management. Bd. 1. 2015 S. 59 - 61
Stoop, Ralph L.; Wipf, Mathias; Müller, Steffen et al.
Competing surface reactions limiting the performance of ion-sensitive field-effect transistorsSensors and Actuators B: Chemical. Bd. 220. Elsevier BV 2015 S. 500 - 507
Tarasov, Alexey; Zhang, Siyuan; Tsai, Meng‐Yen et al.
Controlled Doping of Large‐Area Trilayer MoS2 with Molecular Reductants and OxidantsAdvanced Materials. Bd. 27. H. 7. Wiley 2015 S. 1175 - 1181
Kudraß, Thomas; Schiefer, Bernhard
Datenbank-AnwendungsprogrammierungKudraß, T. (Hrsg). Taschenbuch Datenbanken : mit 30 Tabellen. München: Fachbuchverl. Leipzig im Carl-Hanser-Verl. 2015 S. 144 - 188
Saumer, M.; Rabe, H.; Decker, D.
Development of 3D-Nanostructured Electrodes for Biosensing ApplicationsProceedings of 4th International Conference in Advanced Manufacturing for Multifunctional Miniaturised Devices (ICAM3D). Loughbourough. 2015
Tronnier, U.; Wagner, C.; Naumann, L. et al.
Development of an Android-App for the Assessment and Treatment of Incontinence in ChildrenProc. of 26th Congress ESPU. Prague. 2015
Campbell, Philip M.; Tarasov, Alexey; Joiner, Corey A. et al.
Enhanced Resonant Tunneling in Symmetric 2D Semiconductor Vertical Heterostructure TransistorsACS Nano. Bd. 9. H. 5. American Chemical Society (ACS) 2015 S. 5000 - 5008
Tsai, Meng-Yen; Tarasov, Alexey; Hesabi, Zohreh R. et al.
Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain SensorsACS Applied Materials & Interfaces. Bd. 7. H. 23. American Chemical Society (ACS) 2015 S. 12850 - 12855
Tarasov, Alexey; Tsai, Meng-Yen; Flynn, Erin M et al.
Gold-coated graphene field-effect transistors for quantitative analysis of protein–antibody interactions2D Materials. Bd. 2. H. 4. IOP Publishing 2015 S. 044008