Flexoelectric enhanced photovoltaic by charge transport modulation in 2D α-MoO₃
Nano Energy. Bd. 146. Amsterdam: Elsevier 2025
Erscheinungsjahr: 2025
Publikationstyp: Zeitschriftenaufsatz
Sprache: Englisch
Doi/URN: 10.1016/j.nanoen.2025.111493
| Geprüft: | Bibliothek |
Inhaltszusammenfassung
Photovoltaic effects in two-dimensional (2D) materials leverage atomic-scale quantum phenomena, enabling ultrathin energy-converting architectures beyond the limits of conventional semiconductors. The strong in-plane bonding combined with the interlayer van der Waals interactions in 2D metal-oxide semiconductors facilitates enhanced strain gradients for generating flexoelectric polarization. The polarization-induced built-in electric field further modulates the metal-semiconductor Schottky ba...Photovoltaic effects in two-dimensional (2D) materials leverage atomic-scale quantum phenomena, enabling ultrathin energy-converting architectures beyond the limits of conventional semiconductors. The strong in-plane bonding combined with the interlayer van der Waals interactions in 2D metal-oxide semiconductors facilitates enhanced strain gradients for generating flexoelectric polarization. The polarization-induced built-in electric field further modulates the metal-semiconductor Schottky barrier, thereby controlling the material’s photoresponse performances. Leveraging this mechanism, we synthesized single-crystalline 2D MoO3 via chemical vapor deposition (CVD). Piezoresponse force microscopy (PFM) confirmed its robust flexoelectric properties, while conductive atomic force microscopy (C-AFM) induced large strain gradients to enhance photovoltaic response. This work establishes a pathway for flexoelectricity-driven photovoltaic control and performance augmentation in monolithic materials.» weiterlesen» einklappen
