Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in gamma-Fe2O3/NiO/Pt epitaxial stacks
Applied physics letters. Bd. 114. H. 10. Melville, NY: American Inst. of Physics 2019 Art. 102405
Erscheinungsjahr: 2019
ISBN/ISSN: 1077-3118 ; 0003-6951
Publikationstyp: Zeitschriftenaufsatz (Forschungsbericht)
Sprache: Englisch
Doi/URN: urn:nbn:de:hebis:77-publ-591981
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Inhaltszusammenfassung
We study the spin Hall magnetoresistance (SMR) in epitaxial γ–Fe2O3/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as ...We study the spin Hall magnetoresistance (SMR) in epitaxial γ–Fe2O3/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as a function of temperature. We explain our data by a combination of spin current reflection from both the NiO/Pt and γ-Fe2O3/NiO interfaces and the thickness-dependent exchange coupling mode between the NiO and γ-Fe2O3 layers, comprising parallel alignment for thin NiO and perpendicular alignment for thick NiO.» weiterlesen» einklappen
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DDC Sachgruppe:
Physik