Inhaltszusammenfassung

Purpose The purpose of this paper is to fabricate a new Cu-Sn-Ni-Cu interconnection microstructure for electromigration studies in 3D integration. Design/methodology/approach The Cu-Sn-Ni-Cu interconnection microstructure is fabricated by a three-mask photolithography process with different electroplating processes. This microstructure consists of pads and conductive lines as the bottom layer, Cu-Sn-Ni-Cu pillars with the diameter of 10-40 μm as the middle layer and Cu conductive lines...Purpose The purpose of this paper is to fabricate a new Cu-Sn-Ni-Cu interconnection microstructure for electromigration studies in 3D integration. Design/methodology/approach The Cu-Sn-Ni-Cu interconnection microstructure is fabricated by a three-mask photolithography process with different electroplating processes. This microstructure consists of pads and conductive lines as the bottom layer, Cu-Sn-Ni-Cu pillars with the diameter of 10-40 μm as the middle layer and Cu conductive lines as the top layer. A lift-off process is adopted for the bottom layer. The Cu-Sn-Ni-Cu pillars are fabricated by photolithography with sequential electroplating processes. To fabricate the top layer, a sputtered Cu layer is introduced to prevent the middle-layer photoresist from being developed. With the final Cu electroplating processes, the Cu-Sn-Ni-Cu interconnection microstructure is successfully achieved. » weiterlesen» einklappen

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Klassifikation

DDC Sachgruppe:
Chemie