Univ.-Prof. Dr. Hermann Adrian
Institut für Physik, Johannes Gutenberg-Universität Mainz
- 06131/39-3637
- 06131/39-5156
Adrian, Hermann; Jakob, G.; Przyslupski, P. et al.
Anisotropy of the pinning force density and the resistive transitions in YBa2Cu3O7/PrBa2Cu3O7 superlatticesPhysica C. Bd. 185-189. 1991 S. 2087 - 2088
Li, R.; Weimer, U.; Feile, R. et al.
Anomalous intensity of the 335 cm−1 phonon in YBa2Cu3O7−δPhysica C. Bd. 175. H. 1/2. 1991 S. 89 - 92
Schulte, B.; Maul, M.; Becker, W. et al.
Carrier gas‐free chemical vapor deposition technique for in situ preparation of high quality YBa2Cu3O7−δ thin filmsApplied physics letters. Bd. 59. H. 7. 1991 S. 869 - 871
Adrian, Hermann; Tomé-Rosa, C.; Jakob, G. et al.
Critical current density and upper critical fieldof YBa2 Cu3 07 thin filmsZ. Physik B. Bd. 83. 1991 S. 221 - 226
Ginsbach, A.; Adrian, G.; Schneider, R. et al.
Electrical and structural properties of YBa2Cu3O7 films on poly and single crystalline oxides of Cu and NiPhysica C. Bd. 185/189. H. 3. 1991 S. 2111 - 2112
Jakob, Gerhard; Przyslupski, P.; Stölzel, C. et al.
High-superconducting critical current densities in YBa2Cu3O7/PrBa2Cu3O7 superlatticesApplied physics letters. Bd. 59. 1991 S. 1626 - 1628
Adrian, G.; Grabe, G.; Wilkens, W. et al.
In situ preparation and transport properties of YBa2Cu3O7 films on sapphire with Zr(Y)O2 buffer layersJournal of applied physics. Bd. 70. H. 11. 1991 S. 6934 - 6938
Huth, M.; Schmitt, M.; Adrian, Hermann
Influence of composition and long term annealing on the weak link behaviour of the high-Tc superconductor (Bi, Pb)2+xSr2−yCa2+yCu3+zO10+δPhysica C. Bd. 178. H. 1/3. 1991 S. 203 - 212
Adrian, G.; Wilkens, W.; Adrian, Hermann et al.
Superconductive and normal state transport properties of YBa2Cu3O7 films on sapphire in high magnetic fieldsSuperconductor science and technology : an Institute of Physics journal. Bd. 4. 1991 S. 169 - 171
Adrian, G.; Grabe, G.; Wilkens, W. et al.
Surface morphology and electrical transport properties of YBa2Cu3O7 films on substrates relevant for technical applicationPhysica C. Bd. 185/189. H. 3. 1991 S. 2109 - 2110