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Ferroelectricity and structure of BaTiO3 grown on YBa2Cu3O7- thin films

The European physical journal / B, condensed matter and complex systems. Bd. 14. 2000 S. 447 - 451

Erscheinungsjahr: 2000

Publikationstyp: Zeitschriftenaufsatz (Forschungsbericht)

Sprache: Englisch

Doi/URN: 10.1007/s100510051056

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Inhaltszusammenfassung


We have investigated the crystal structure and the ferroelectric properties of BaTiO3 thin films with YBa2Cu3O as the bottom and Au as the top electrode. Epitaxial heterostructures of YBa2Cu3O and BaTiO3 were prepared by dc and rf sputtering, respectively. The crystal structure of the films was characterised by X-ray diffraction. The ferroelectric behaviour of the BaTiO3 films was confirmed by hysteresis loop measurements using a Sawyer Tower circuit. We obtain a coercive field of 30 kV/cm an...We have investigated the crystal structure and the ferroelectric properties of BaTiO3 thin films with YBa2Cu3O as the bottom and Au as the top electrode. Epitaxial heterostructures of YBa2Cu3O and BaTiO3 were prepared by dc and rf sputtering, respectively. The crystal structure of the films was characterised by X-ray diffraction. The ferroelectric behaviour of the BaTiO3 films was confirmed by hysteresis loop measurements using a Sawyer Tower circuit. We obtain a coercive field of 30 kV/cm and a remanent polarisation of 1.25 ?C/cm2. At sub-switching fields the capacitance of the films obeys a relation analogous to the Rayleigh law. This behaviour indicates an interaction of domain walls with randomly distributed pinning centres. At a field of 5 MV/m we calculate a 3% contribution of the irreversible domain wall motion to the total dielectric constant. » weiterlesen» einklappen

Autoren


Schwan, Ch. (Autor)
Martin, F. (Autor)
Martinez, J. C. (Autor)
Adrian, Hermann (Autor)

Klassifikation


DFG Fachgebiet:
Physik der kondensierten Materie

DDC Sachgruppe:
Physik

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