Above 16% efficient sequentially grown Cu(In,Ga)(Se,S)2-based solar cells with atomic layer deposited Zn(O,S) buffers
Progress in Photovoltaics. Bd. 23. 2015 S. 1493 - 1500
Erscheinungsjahr: 2015
Publikationstyp: Zeitschriftenaufsatz (Übersichtsartikel)
Sprache: Englisch
Schlüsselwörter:
Doi/URN: 10.1002/pip.2579
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Inhaltszusammenfassung
We report the development of Cd-free buffers by atomic layer deposition for chalcopyrite-based solar cells. Zn(O,S) buffer layers were prepared by atomic layer deposition on sequentially grown Cu(In,Ga)(Se,S)2 absorbers from Bosch Solar CISTech GmbH. An externally certified efficiency of 16.1% together with an open circuit voltage of 612mV were achieved on laboratory scale devices. Stability tests show that the behavior of the ALD-Zn(O,S)-buffered devices can be characterized weitereas stable...We report the development of Cd-free buffers by atomic layer deposition for chalcopyrite-based solar cells. Zn(O,S) buffer layers were prepared by atomic layer deposition on sequentially grown Cu(In,Ga)(Se,S)2 absorbers from Bosch Solar CISTech GmbH. An externally certified efficiency of 16.1% together with an open circuit voltage of 612mV were achieved on laboratory scale devices. Stability tests show that the behavior of the ALD-Zn(O,S)-buffered devices can be characterized weitereas stable only showing a minor drift of the open circuit voltage and the fill factor.» weiterlesen» einklappen
Autoren
Klassifikation
DFG Fachgebiet:
3.17 - Theoretische Chemie
DDC Sachgruppe:
Physik
