Properties of disordered Mo3Ge thin films with A15 structure
Solid state communications. Bd. 39. 1980 S. 145 - 148
Erscheinungsjahr: 1980
Publikationstyp: Zeitschriftenaufsatz (Forschungsbericht)
Sprache: Englisch
Doi/URN: 10.1016/0038-1098(81)91066-8
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Inhaltszusammenfassung
Heavy ion irradiation of A15 Mo3Ge with the low transition temperature Tc = 1.45 K raises Tc to 6 K. For the first time in A15 compounds a Tc degradation (? 3 K) after having passed through a maximum is observed until near 3.5 K the saturation value is reached. The effects on Tc are interpreted by variations of the deduced (H'c2, ) density of states at the Fermi level. This picture consistently explains the Tc degradation of the high-Tc A15 compounds.
Autoren
Lehmann, M. (Autor)
Bieger, J. (Autor)
Müller, P. (Autor)
Nölscher, C. (Autor)
Saemann-Ischenko, G. (Autor)
Haase, E. L. (Autor)
Klassifikation
DFG Fachgebiet:
Physik der kondensierten Materie
DDC Sachgruppe:
Physik
