Inhaltszusammenfassung

High TcNb3Ge films prepared by coevaporation have been irradiated by 20 MeV sulfur ions at low temperatures (< 25 K). X-ray analysis showed an expansion of the Al5 lattice and an increasing degree of amorphicity, while Tcvs. dose decreased from 22 K to 4.3 K with a slight minimum of ∼70 mK depth atphi tsim 3.10^{15}cm-2before saturation. - Filmsirradiated by doses up toleq 1.5 cdot 10^{15}cm-2could be annealed to the pre-irradiation Tc. In contrast, strong irradiation led to an (X-ray-) amorp...High TcNb3Ge films prepared by coevaporation have been irradiated by 20 MeV sulfur ions at low temperatures (< 25 K). X-ray analysis showed an expansion of the Al5 lattice and an increasing degree of amorphicity, while Tcvs. dose decreased from 22 K to 4.3 K with a slight minimum of ∼70 mK depth atphi tsim 3.10^{15}cm-2before saturation. - Filmsirradiated by doses up toleq 1.5 cdot 10^{15}cm-2could be annealed to the pre-irradiation Tc. In contrast, strong irradiation led to an (X-ray-) amorphous structure, from which Tcvalues of only 15-17 K could be recovered, similar to the results obtained for amorphous NbGe films condensed at LN2temperature. - The behaviour of the film resistivity during the heat treatment indicates that for films irradiated by low doses only lattice defects anneal, whereas for high dose damaged films recrystallization from the amorphous state occurs. » weiterlesen» einklappen

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Klassifikation

DFG Fachgebiet:
Physik der kondensierten Materie

DDC Sachgruppe:
Physik