Preparation and structural characterization of thin epitaxial Bi2Sr2CaCu2O8+δ films with Tc in the 90 K range
Physica C. Bd. 215. H. 1/2. 1993 S. 123 - 131
Erscheinungsjahr: 1993
ISBN/ISSN: 0921-4534
Publikationstyp: Zeitschriftenaufsatz
Sprache: Englisch
Doi/URN: 10.1016/0921-4534(93)90372-W
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Inhaltszusammenfassung
Thin films of Bi2Sr2CaCu2O8 ? with Tc up to 92 K were prepared by an in situ sputtering method on SrTiO3 (100) and LaAlO3 (100) substrates. A strong c-axis orientation of the film growth with low mosaic spread and full epitaxy within the ab-plane were confirmed by X-ray diffraction in Bragg-Brentano and four-circle geometry. Rutherford backscattering and channeling confirm the correct film composition and highly textured growth with a minimum yield of 23%. The surface morphology of the films ...Thin films of Bi2Sr2CaCu2O8 ? with Tc up to 92 K were prepared by an in situ sputtering method on SrTiO3 (100) and LaAlO3 (100) substrates. A strong c-axis orientation of the film growth with low mosaic spread and full epitaxy within the ab-plane were confirmed by X-ray diffraction in Bragg-Brentano and four-circle geometry. Rutherford backscattering and channeling confirm the correct film composition and highly textured growth with a minimum yield of 23%. The surface morphology of the films was examined by STM and SEM studies, revealing a low density of precipitates and the absence of screw dislocations. The depth profile of the composition was investigated by secondary neutrals mass spectroscopy (SNMS). » weiterlesen» einklappen
Autoren
Klassifikation
DFG Fachgebiet:
Physik der kondensierten Materie
DDC Sachgruppe:
Physik
