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Influence of the selenium amount on the structural and electronic properties of Cu(In,Ga)Se2 thin films and solar cells formed by the stacked elemental layer process

Thin Solid Films : international journal on the science and technology of condensed matter films. Bd. 608. 2016 S. 62 - 70

Erscheinungsjahr: 2016

ISBN/ISSN: 0040-6090

Publikationstyp: Zeitschriftenaufsatz

Sprache: Englisch

Doi/URN: 10.1016/j.tsf.2016.04.015

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Inhaltszusammenfassung


In the following article the influence of selenium supply on the stacked elemental layer process during the final annealing step is investigated. We find that the Se supply strongly influences the phase formation in the Cu(In,Ga)Se2 resulting in a modified Ga/In distribution. The effects of Se supply on the structural and electronic properties of the films are reported. The solar cell performance has been investigated in detail using current voltage and external quantum efficiency measurement...In the following article the influence of selenium supply on the stacked elemental layer process during the final annealing step is investigated. We find that the Se supply strongly influences the phase formation in the Cu(In,Ga)Se2 resulting in a modified Ga/In distribution. The effects of Se supply on the structural and electronic properties of the films are reported. The solar cell performance has been investigated in detail using current voltage and external quantum efficiency measurements. We find that the chalcopyrite crystal formation is strongly influenced by the Se supply during the growth process. Furthermore the interdiffusion of Ga and In is accelerated with increasing Se amount. This has direct consequences on band gap and series resistance, which leads to changes in the values of short-circuit current density, open-circuit voltage and fill factor. The opencircuit voltage increases with increasing band gap of the Cu(In,Ga)Se2, whereas the short-circuit current density decreaseswith increasing band gap. The fill factor is affected by the formation of MoSe2 at the back contact. The experimental findings are comparedwith the theoretical efficiency limits calculated from the Shockley–Queisser model, and also with numerical 1D SCAPS simulations.» weiterlesen» einklappen

  • Cu(InGa)Se2
  • Stacked elemental layer
  • Diffusion

Autoren


Mueller, B. J. (Autor)
Opasanont, B. (Autor)
Haug, V. (Autor)
Zweigart, S. (Autor)
Herr, U. (Autor)

Klassifikation


DFG Fachgebiet:
Physik der kondensierten Materie

DDC Sachgruppe:
Physik

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