Inhaltszusammenfassung

Thin films of PbMo6S8 with a critical temperature of 12.7K were irradiated with 20MeV sulphur ions at temperatures below 20K. At a dose of 1014cm?2 Tc drops below 1.2K, whereas the electrical resistivity (16K) reaches four to five times its initial value. (dHc2/dT)T=Tc increases from 35kG/K to 65kG/K at very low doses. The decrease of Tc can be explained by a decrease of the density of states at the Fermi energy. The negative temperature coefficient of (T) after irradiation suggests a local v...Thin films of PbMo6S8 with a critical temperature of 12.7K were irradiated with 20MeV sulphur ions at temperatures below 20K. At a dose of 1014cm?2 Tc drops below 1.2K, whereas the electrical resistivity (16K) reaches four to five times its initial value. (dHc2/dT)T=Tc increases from 35kG/K to 65kG/K at very low doses. The decrease of Tc can be explained by a decrease of the density of states at the Fermi energy. The negative temperature coefficient of (T) after irradiation suggests a local variation of the cluster valence electron concentration due to displaced atoms. » weiterlesen» einklappen

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Klassifikation

DFG Fachgebiet:
3.17 - Theoretische Chemie

DDC Sachgruppe:
Physik