Variations of the quantum Hall plateaus with lattice disorder for GaAs---AlχGa1−χAs heterostructures
Superlattices and microstructures. Bd. 5. H. 3. 1989 S. 465 - 469
Erscheinungsjahr: 1989
ISBN/ISSN: 1096-3677 ; 0749-6036
Publikationstyp: Zeitschriftenaufsatz
Sprache: Englisch
Doi/URN: 10.1016/0749-6036(89)90334-0
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Inhaltszusammenfassung
GaAs---Al?Ga1??As heterostructures were irradiated with 6 MeV protons at low temperature to study systematically the influence of lattice disorder in two-dimensional electron systems on resistivity ?? mobility ?, carrier concentration n and quantum Hall effect structures. The additional irradiation induced scattering centres lead to a trapping of carriers resulting in a decrease of n and to a broadening of the quantum Hall plateaus and the magnetic field regions with ?? = 0, which is qualitat...GaAs---Al?Ga1??As heterostructures were irradiated with 6 MeV protons at low temperature to study systematically the influence of lattice disorder in two-dimensional electron systems on resistivity ?? mobility ?, carrier concentration n and quantum Hall effect structures. The additional irradiation induced scattering centres lead to a trapping of carriers resulting in a decrease of n and to a broadening of the quantum Hall plateaus and the magnetic field regions with ?? = 0, which is qualitatively explained in the framework of localization in magnetic fields. » weiterlesen» einklappen
Autoren
Klassifikation
DFG Fachgebiet:
3.17 - Theoretische Chemie
DDC Sachgruppe:
Physik
