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Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As

Applied physics letters. Bd. 81. H. 21. Melville, NY: American Inst. of Physics 2002 S. 4029 - 4031

Erscheinungsjahr: 2002

ISBN/ISSN: 0003-6951

Publikationstyp: Zeitschriftenaufsatz

Sprache: Englisch

Geprüft:Bibliothek

Inhaltszusammenfassung


We report on a theoretical study of dc transport coefficients in (ga,mn)as diluted magnetic semiconductor ferromagnets that accounts for quasiparticle scattering from ionized mn2 acceptors with a local moment s=5/2 and from nonmagnetic compensating defects. in metallic samples boltzmann transport theory with golden rule scattering rates accounts for the principle trends of the measured difference between resistances for magnetizations parallel and perpendicular to the current. we predict tha...We report on a theoretical study of dc transport coefficients in (ga,mn)as diluted magnetic semiconductor ferromagnets that accounts for quasiparticle scattering from ionized mn2 acceptors with a local moment s=5/2 and from nonmagnetic compensating defects. in metallic samples boltzmann transport theory with golden rule scattering rates accounts for the principle trends of the measured difference between resistances for magnetizations parallel and perpendicular to the current. we predict that the sign and magnitude of the anisotropic magnetoresistance can be changed by strain engineering or by altering chemical composition. (c) 2002 american institute of physics.» weiterlesen» einklappen

Autoren


Jungwirth, T (Autor)
Abolfath, M (Autor)
Sinova, Jairo (Autor)
Kucera, J (Autor)
MacDonald, AH (Autor)

Klassifikation


DFG Fachgebiet:
3.17 - Theoretische Chemie

DDC Sachgruppe:
Physik