Quantum Hall plateau transition at order 1/N
Physical review letters. Bd. 87. H. 4. College Park, Md.: APS 2001 046801
Erscheinungsjahr: 2001
ISBN/ISSN: 0031-9007
Publikationstyp: Zeitschriftenaufsatz
Sprache: Englisch
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Inhaltszusammenfassung
The localization behavior of noninteracting two-dimensional electrons in a random potential and strong magnetic field is of fundamental interest for the physics of the quantum hall effect. in order to understand the emergence of power-law delocalization near the discrete extended-state energies e-n = (h) over barw(c)(n + 1/2), we study a generalization of the disorder-averaged liouvillian framework for the lowest landau level to n flavors of electron densities (n = 1 for the physical case). w...The localization behavior of noninteracting two-dimensional electrons in a random potential and strong magnetic field is of fundamental interest for the physics of the quantum hall effect. in order to understand the emergence of power-law delocalization near the discrete extended-state energies e-n = (h) over barw(c)(n + 1/2), we study a generalization of the disorder-averaged liouvillian framework for the lowest landau level to n flavors of electron densities (n = 1 for the physical case). we find analytically the large-n limit and 1/n corrections for all disorder strengths: at n = infinity this gives an estimate of the critical conductivity, and at order 1/n an estimate of the localization exponent v.» weiterlesen» einklappen
Autoren
Klassifikation
DFG Fachgebiet:
3.17 - Theoretische Chemie
DDC Sachgruppe:
Physik