Inhaltszusammenfassung

We report the discovery of a very large tunneling anisotropic magnetoresistance in an epitaxially grown (ga,mn)as/gaas/(ga,mn)as structure. the key novel spintronics features of this effect are as follows: (i) both normal and inverted spin-valve-like signals; (ii) a large nonhysteretic magnetoresistance for magnetic fields perpendicular to the interfaces; (iii) magnetization orientations for extremal resistance are, in general, not aligned with the magnetic easy and hard axis; (iv) enormous a...We report the discovery of a very large tunneling anisotropic magnetoresistance in an epitaxially grown (ga,mn)as/gaas/(ga,mn)as structure. the key novel spintronics features of this effect are as follows: (i) both normal and inverted spin-valve-like signals; (ii) a large nonhysteretic magnetoresistance for magnetic fields perpendicular to the interfaces; (iii) magnetization orientations for extremal resistance are, in general, not aligned with the magnetic easy and hard axis; (iv) enormous amplification of the effect at low bias and temperatures.» weiterlesen» einklappen

Autoren

Klassifikation

DFG Fachgebiet:
3.17 - Theoretische Chemie

DDC Sachgruppe:
Physik