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Nonequilibrium spin Hall accumulation in ballistic semiconductor nanostructures

Physical review letters. Bd. 95. H. 4. College Park, Md.: APS 2005 046601

Erscheinungsjahr: 2005

ISBN/ISSN: 0031-9007

Publikationstyp: Zeitschriftenaufsatz

Sprache: Englisch

Geprüft:Bibliothek

Inhaltszusammenfassung


We demonstrate that the flow of a longitudinal unpolarized current through a ballistic two-dimensional electron gas with rashba spin-orbit coupling will induce a nonequilibrium spin accumulation which has opposite signs for the two lateral edges and is, therefore, the principal observable signature of the spin hall effect in two-probe semiconductor nanostructures. the magnitude of its out-of-plane component is gradually diminished by static disorder, while it can be enhanced by an in-plane tr...We demonstrate that the flow of a longitudinal unpolarized current through a ballistic two-dimensional electron gas with rashba spin-orbit coupling will induce a nonequilibrium spin accumulation which has opposite signs for the two lateral edges and is, therefore, the principal observable signature of the spin hall effect in two-probe semiconductor nanostructures. the magnitude of its out-of-plane component is gradually diminished by static disorder, while it can be enhanced by an in-plane transverse magnetic field. moreover, our prediction of the longitudinal component of the spin hall accumulation, which is insensitive to the reversal of the bias voltage, offers direct evidence to differentiate experimentally between the extrinsic, intrinsic, and mesoscopic spin hall mechanisms.» weiterlesen» einklappen

Autoren


Nikolic, BK (Autor)
Souma, S (Autor)
Zarbo, LP (Autor)
Sinova, Jairo (Autor)

Klassifikation


DFG Fachgebiet:
3.17 - Theoretische Chemie

DDC Sachgruppe:
Physik