Compound formation in Ni/In thin film systems
Hyperfine interactions. Bd. 60. H. 1/4. Dordrecht: Kluwer 1990 S. 1003 - 1006
Erscheinungsjahr: 1990
ISBN/ISSN: 0304-3843
Publikationstyp: Zeitschriftenaufsatz
Sprache: Englisch
Doi/URN: 10.1007/BF02399915
| Geprüft: | Bibliothek |
Inhaltszusammenfassung
Interface compound formation in Ni/In film couples has been studied by means of the PAC method using radioactive111In probe atoms. Subsequent occurrence of the compounds Ni10In27, Ni2In3, NiIn and Ni3In has been observed after isochronal annealing. Interdiffusion was found to start at temperatures about 250K whereby Ni propagates into the In film.
Autoren
Platzer, R. (Autor)
Wöhrmann, U. (Autor)
Ding, X.L. (Autor)
Fink, R. (Autor)
Krausch, Georg (Autor)
Voigt, J. (Autor)
Wesche, R. (Autor)
Schatz, G. (Autor)
Klassifikation
DDC Sachgruppe:
Physik
