Interface compound formation and dependence on In-layer thickness in Ni/In thin-film systems
Applied physics letters. Bd. 58. H. 25. Ridge, NY: American Physical Society 1991 S. 2904 - 2906
Erscheinungsjahr: 1991
ISBN/ISSN: 0031-9007
Publikationstyp: Zeitschriftenaufsatz
Sprache: Englisch
Doi/URN: 10.1063/1.104717
| Geprüft: | Bibliothek |
Inhaltszusammenfassung
Interdiffusion and interface compound formation has been observed at the system Ni/In by using thin-film couples as well as thin In films on low index Ni single-crystal substrates. The method applied was the perturbed gammagamma-angular correlation technique, which is very sensitive to local structures and their changes around probe atoms. The successive occurrence of different Ni/In compounds could be observed on isochronal annealing above 230 K. A correlation between the appearance of compo...Interdiffusion and interface compound formation has been observed at the system Ni/In by using thin-film couples as well as thin In films on low index Ni single-crystal substrates. The method applied was the perturbed gammagamma-angular correlation technique, which is very sensitive to local structures and their changes around probe atoms. The successive occurrence of different Ni/In compounds could be observed on isochronal annealing above 230 K. A correlation between the appearance of compounds and In film thickness has been found.» weiterlesen» einklappen
Autoren
Klassifikation
DDC Sachgruppe:
Physik
