Non-reactive metal/semiconductor interfaces : a combined AES, AFM and PAC study
Hyperfine interactions. Bd. 78. H. 1. Dordrecht: Springer 1993 S. 295 - 301
Erscheinungsjahr: 1993
ISBN/ISSN: 1572-9540 ; 0304-3843
Publikationstyp: Zeitschriftenaufsatz
Sprache: Englisch
Doi/URN: 10.1007/BF00568151
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Inhaltszusammenfassung
Thin In films on Ge(100), Si(100) andSi(111) are investigated using Auger-electron spectroscopy (AES), atomic force microscopy (AFM) andperturbed γγ-angular correlation (PAC) spectroscopy, respectively. The growth mode of the metal films is characterized by in situ AES measurements, indicating distinct differences between the different substrate surfaces. Additional AFM investigations are used to monitor the film topography at higher metal coverage. Finally, the local crystalline structure of...Thin In films on Ge(100), Si(100) andSi(111) are investigated using Auger-electron spectroscopy (AES), atomic force microscopy (AFM) andperturbed γγ-angular correlation (PAC) spectroscopy, respectively. The growth mode of the metal films is characterized by in situ AES measurements, indicating distinct differences between the different substrate surfaces. Additional AFM investigations are used to monitor the film topography at higher metal coverage. Finally, the local crystalline structure of the films is studied by the PAC technique.» weiterlesen» einklappen
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Klassifikation
DDC Sachgruppe:
Physik
