Formation of an ultrathin amorphous layer at In/Pd interfaces observed by local and nonlocal techniques
Physical review : B. Bd. 47. H. 15. College Park, Md.: APS 1993 S. 10048 - 10051
Erscheinungsjahr: 1993
ISBN/ISSN: 1095-3795 ; 1098-0121
Publikationstyp: Zeitschriftenaufsatz
Sprache: Englisch
Doi/URN: 10.1103/PhysRevB.47.10048
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Inhaltszusammenfassung
The perturbed γγ-angular correlation technique has been used to study In/Pd(100) interfaces using In 111 isotopes as local probes. A thin amorphous interface layer is found after In deposition at 77 K. Above 350 K, crystalline In/Pd compounds are formed starting with In 3 Pd. This sequence and especially the formation of an amorphous interface has been corroborated by studying the resistance of ultrathin In/Pd multilayers during film growth at 90 K. The previously unknown amorphous In 3 ...The perturbed γγ-angular correlation technique has been used to study In/Pd(100) interfaces using In 111 isotopes as local probes. A thin amorphous interface layer is found after In deposition at 77 K. Above 350 K, crystalline In/Pd compounds are formed starting with In 3 Pd. This sequence and especially the formation of an amorphous interface has been corroborated by studying the resistance of ultrathin In/Pd multilayers during film growth at 90 K. The previously unknown amorphous In 3 Pd phase was identified by in situ electron diffraction on vapor-quenched films.» weiterlesen» einklappen
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